
Boron-Doped Diamond Plate (BDD Plate)
Redoxme




A Boron-Doped Diamond (BDD) on Silicon Substrate (Si) combines the excellent properties of diamond with the versatility of silicon. The conductive silicon wafer is coated with a thin layer of boron-doped diamond. Boron doping introduces p-type conductivity, enhancing electrical properties for electrochemical applications. This product is a more affordable alternative to polycrystalline BDD plates.
Two types are available:
Application note
BDD is particularly important in electroanalysis for sensors and biosensors. The surface can be (photo)functionalized or modified with metal nanoparticles (e.g. Au). BDD is also used for electrochemical energy storage, electrocatalysis, and electrosynthesis. This product differs slightly in electrochemical properties from polycrystalline BDD but is fully justified as a more affordable alternative in most applications.
Product includes
1 x BDD on Si substrate electrode
Available Sizes
7 x 7 x 0.5 mm, 10 x 10 x 0.5 mm, 15 x 15 x 0.5 mm, 10 x 10 x 3 mm
pH Range
1-13
Electrode Material
Boron-Doped Diamond on Silicon (BDD/Si)
Surface Treatment
Polished
Thickness Tolerance
< 10%
Coating Thickness
8 µm
Boron Doping Level
1-5·10²⁰ cm⁻³
Measured Resistivity
37 Ω·cm
Oxygen Evolution Potential (0.5M H₂SO₄)
2.3 V
Hydrogen Evolution Potential (0.5M H₂SO₄)
-0.8 V
Background Current
12 µA/cm²
Recommended Long-Time Current Density
< 80 mA/cm²
Electrochemically Active Area
1.8 cm²/cm²
BDD Layer Thickness
8 µm
Grain Size (BDD)
7 µm
BDD Coating Type
BDD(1)/Si - front + sides coated, BDD(2)/Si - all surfaces coated
Pack Size
1 pc
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