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Boron-Doped Diamond on Silicon Substrate

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Price: On Request

Description

A Boron-Doped Diamond (BDD) on Silicon Substrate (Si) combines the excellent properties of diamond with the versatility of silicon. The conductive silicon wafer is coated with a thin layer of boron-doped diamond. Boron doping introduces p-type conductivity, enhancing electrical properties for electrochemical applications. This product is a more affordable alternative to polycrystalline BDD plates.

Two types are available:

  • BDD(1)/Si: Front surface and sides only coated with BDD. Suitable for bottom-mount or sample holder setups with front or back electrical contact.
  • BDD(2)/Si: All surfaces of the silicon substrate coated with BDD. Recommended when the entire electrode is immersed in electrolyte.

Application note

BDD is particularly important in electroanalysis for sensors and biosensors. The surface can be (photo)functionalized or modified with metal nanoparticles (e.g. Au). BDD is also used for electrochemical energy storage, electrocatalysis, and electrosynthesis. This product differs slightly in electrochemical properties from polycrystalline BDD but is fully justified as a more affordable alternative in most applications.

Product includes

1 x BDD on Si substrate electrode

Specifications

General Electrode

Thickness Tolerance

< 10%

BDD Coating Type

BDD(2)/Si - all surfaces coated, BDD(1)/Si - front + sides coated

Surface Treatment

Polished

Boron Doping Level

1-5·10²⁰ cm⁻³

Recommended Long-Time Current Density

< 80 mA/cm²

Background Current

12 µA/cm²

Electrochemically Active Area

1.8 cm²/cm²

Oxygen Evolution Potential (0.5M H₂SO₄)

2.3 V

BDD Layer Thickness

8 µm

Grain Size (BDD)

7 µm

Hydrogen Evolution Potential (0.5M H₂SO₄)

-0.8 V

Electrode Material

Boron-Doped Diamond on Silicon (BDD/Si)

Measured Resistivity

37 Ω·cm

Coating Thickness

8 µm

General

Available Sizes

10 × 10 × 3 mm, 10 × 10 × 0.5 mm, 15 × 15 × 0.5 mm, 7 × 7 × 0.5 mm

pH Range

1-13

Packaging Size

1 pc

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