CVD Graphene Film on 300 nm SiO2/Si Wafer

Monolayer CVD graphene on a 300 nm SiO2/Si wafer is a ready-to-use platform for graphene device fabrication, characterization and research. A single atomic layer of graphene is grown by chemical vapor deposition on copper foil and then moved onto a standard 4 inch silicon wafer with a thermal oxide layer through a wet transfer process, so the film arrives on the substrate most labs already use for field-effect transistors and sensors.

Graphene combines high electrical conductivity, high carrier mobility and high optical transparency in a two-dimensional film. On an oxidized silicon wafer the graphene is easy to locate by optical contrast and can be patterned, contacted and gated directly, which makes it well suited to graphene field-effect transistors (GFETs), electrochemical and biosensing devices, optical and optoelectronic studies, and electrode or interface research.

Film quality is verified by Raman spectroscopy, SEM and optical microscopy, covering monolayer quality, defect level and graphene coverage on the wafer. The single-side polished wafer uses standard SEMI flats, which makes alignment straightforward in cleanroom workflows.