This is a horizontally mounted, double compartment photo-electrochemical H-Cell designed to measure characteristics of electrolyte-gated (or solution-gated) transistors with photo-sensitive channel material, using liquid or gel electrolyte in stationary conditions. The sample can be irradiated vertically and horizontally.

The measured transistor sample can be fabricated on a rigid or flexible flat substrate (not included) with conducting thin film source and drain, and a layer of conducting or semiconducting channel material. The sample is loaded from the bottom via screw mount in one compartment, while the gate is mounted in a top casing of the second compartment. Compartments are separated with an ion-exchange membrane (e.g. DuPont's Nafion membrane), so the electrochemical products at Gate and channel material do not affect the opposite electrode.

The cell elements are constructed with materials that are inert to the sample (PEEK). It well fits aqueous (FKM/EPDM O-Rings) and organic solvent (FFKM O-Rings) electrolyte requirements. The construction is gas-tight and can be used when the removal and exclusion of contaminants is required by bubbling of an inert gas through the electrolyte.

Application note

This cell is designed mainly for light sensors and opto-logic gates based on following types of electrolyte-gated transistors with photo-sensitive channel material: EG-FET, EGOFET, OECT, ISFET, and ISOFET. Various gate electrodes are suitable for this cell including metal wires and meshes as well as graphite rod, which can further be functionalized with ion-selective membrane, if needed.

Product includes

• 1 x lid
• 1 x CE compartment 15 mL
• 2 x sleeve
• 1 x WE compartment 10 mL
• 2 x holder (sample and window)
• 1 x quartz window
• 1 x micro tripod
• 4 x plug