Electrolyte-Gated Transistor Bottom Mount Cell - 15 mL, 0.2 cm2

This is a stationary solution electrochemical cell designed to measure characteristics of electrolyte-gated (or solution-gated) transistors using liquid or gel electrolyte. The measured transistor sample can be fabricated on a rigid or flexible flat substrate (not included) with conducting thin film source and drain, and a layer of conducting or semiconducting channel material.

The sample is loaded from the bottom via magnetic or screw mount, while the gate is mounted in a top casing. A reference electrode can also be mounted in the top casing in case it is needed to control the channel/electrolyte interfacial potential or perform an electrochemical pre-treatment on the channel material. Source and drain electrodes can be accessed through cut-outs in the cell bottom casing, using needle probes or toothless crocodile clips.

The cell elements are constructed with materials that are inert to the sample (glass, PEEK, and Fluorocarbons). It well fits aqueous (FKM/EPDM O-Rings) and organic solvent (FFKM O-Rings) electrolyte requirements. The construction is gas-tight and can be used when the removal and exclusion of contaminants such as oxygen and water is required by bubbling of an inert gas through the electrolyte.

Application note

This cell is designed for following types of electrolyte-gated transistors: Electrolyte-Gated Field Effect Transistor (EG-FET), Electrolyte-Gated Organic Field Effect Transistor (EGOFET), Organic Electrochemical Transistor (OECT), Ion-Sensitive Field Effect Transistor (ISFET), and Ion-sensitive Organic Field Effect Transistor (ISOFET). This system can also be used to measure characteristics of transistors with mono-layer graphene as a channel conductor.

Product includes

• 1 x lid
• 1 x glass chamber
• 1 x bottom casing
• 1 x sample mount
• 1 x plug